Specifications
Product AttributeAttribute ValueSearch Similar
Manufacturer:Diodes Incorporated
Product Category:Bipolar Transistors - BJT
RoHS: Details
Mounting Style:Through Hole
Package / Case:TO-92-3
Transistor Polarity:NPN
Configuration:Single
Collector- Emitter Voltage VCEO Max:25 V
Collector- Base Voltage VCBO:80 V
Emitter- Base Voltage VEBO:5 V
Collector-Emitter Saturation Voltage:220 mV
Maximum DC Collector Current:4 A
Pd - Power Dissipation:1 W
Gain Bandwidth Product fT:180 MHz
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 200 C
Series:ZTX1049
Packaging:Ammo Pack
Brand:Diodes Incorporated
Continuous Collector Current:4 A
DC Collector/Base Gain hfe Min:300
DC Current Gain hFE Max:1200
Height:4.01 mm
Length:4.77 mm
Product Type:BJTs - Bipolar Transistors
2000
Subcategory:Transistors
Technology:Si
Width:2.41 mm
Unit Weight:0.016000 oz